Vishay IRF840A Type N-Channel MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220 IRF840APBF
- RS-artikelnummer:
- 178-0835
- Tillv. art.nr:
- IRF840APBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
645,80 kr
(exkl. moms)
807,25 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 50 enhet(er) från den 19 januari 2026
- Dessutom levereras 200 enhet(er) från den 19 januari 2026
- Dessutom levereras 5 450 enhet(er) från den 26 januari 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 12,916 kr | 645,80 kr |
| 100 - 200 | 10,978 kr | 548,90 kr |
| 250 + | 10,333 kr | 516,65 kr |
*vägledande pris
- RS-artikelnummer:
- 178-0835
- Tillv. art.nr:
- IRF840APBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF840A | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF840A | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.01mm | ||
Length 10.41mm | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.
Operating junction and storage temperature range - 55 to + 150°C
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