ROHM RX1G08CGN N-Channel MOSFET, 80 A, 40 V, 3-Pin TO220AB RX1G08CGNC10

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RS-artikelnummer:
177-6192
Tillv. art.nr:
RX1G08CGNC10
Tillverkare / varumärke:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Series

RX1G08CGN

Package Type

TO220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

10.1mm

Width

4.7mm

Number of Elements per Chip

1

Height

16.3mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

RoHS-status: Inte relevant

COO (Country of Origin):
TH
RX1G08CGN is a power MOSFET with low-on resistance and High power small mold package(TO220AB). It is suitable for switching.

Low on - resistance
High power small mold package(TO220AB)
Pb-free lead plating

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