onsemi Dual NVMFD5C680NL 2 Type N-Channel MOSFET, 26 A, 60 V Enhancement, 8-Pin DFN NVMFD5C680NLT1G
- RS-artikelnummer:
- 172-3375
- Tillv. art.nr:
- NVMFD5C680NLT1G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
341,25 kr
(exkl. moms)
426,50 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 75 | 13,65 kr | 341,25 kr |
| 100 - 225 | 11,769 kr | 294,23 kr |
| 250 + | 10,206 kr | 255,15 kr |
*vägledande pris
- RS-artikelnummer:
- 172-3375
- Tillv. art.nr:
- NVMFD5C680NLT1G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Series | NVMFD5C680NL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 19W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Height | 1.05mm | |
| Width | 5.1 mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Series NVMFD5C680NL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 19W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Height 1.05mm | ||
Width 5.1 mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
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