Toshiba N-Channel MOSFET, 57 A, 30 V, 8-Pin SOP TPH6R003NL
- RS-artikelnummer:
- 171-2203
- Tillv. art.nr:
- TPH6R003NL
- Tillverkare / varumärke:
- Toshiba
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- RS-artikelnummer:
- 171-2203
- Tillv. art.nr:
- TPH6R003NL
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 57 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOP | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 8.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 34 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 5mm | |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Height | 0.95mm | |
| Forward Diode Voltage | 1.2V | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 57 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 8.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 34 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 5mm | ||
Typical Gate Charge @ Vgs 17 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Height 0.95mm | ||
Forward Diode Voltage 1.2V | ||
RoHS-status: Undantagen
Switching Voltage Regulators
DC-DC Converters
High-speed switching
Small gate charge: QSW = 4.3 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 4.5 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
DC-DC Converters
High-speed switching
Small gate charge: QSW = 4.3 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 4.5 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
