Senaste sökningar

    N-Channel MOSFET, 17 A, 55 V, 3-Pin DPAK Infineon IRLR024NTRPBF

    RS-artikelnummer:
    168-8749
    Tillv. art.nr:
    IRLR024NTRPBF
    Tillverkare / varumärke:
    Infineon
    Infineon
    Se alla MOSFETs
    24000 I lager för avsändande samma dag
    Add to Basket
    Enheter

    Lagt till varukorgen

    Pris (ex. moms) Each (On a Reel of 2000)

    5,307 kr

    (exkl. moms)

    6,634 kr

    (inkl. moms)

    EnheterPer unitPer Reel*
    2000 +5,307 kr10 614,00 kr
    RS-artikelnummer:
    168-8749
    Tillv. art.nr:
    IRLR024NTRPBF
    Tillverkare / varumärke:
    Infineon

    Lagstiftning och ursprungsland


    Produktdetaljer

    N-Channel Power MOSFET 55V, Infineon


    Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specifikationer

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current17 A
    Maximum Drain Source Voltage55 V
    Package TypeDPAK (TO-252)
    Mounting TypeSurface Mount
    Pin Count3
    Maximum Drain Source Resistance110 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage2V
    Minimum Gate Threshold Voltage1V
    Maximum Power Dissipation45 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-16 V, +16 V
    Maximum Operating Temperature+175 °C
    Width6.22mm
    Number of Elements per Chip1
    Length6.73mm
    Transistor MaterialSi
    Typical Gate Charge @ Vgs15 nC @ 5 V
    Height2.39mm
    SeriesHEXFET
    Minimum Operating Temperature-55 °C
    24000 I lager för avsändande samma dag
    Add to Basket
    Enheter

    Lagt till varukorgen

    Pris (ex. moms) Each (On a Reel of 2000)

    5,307 kr

    (exkl. moms)

    6,634 kr

    (inkl. moms)

    EnheterPer unitPer Reel*
    2000 +5,307 kr10 614,00 kr