Toshiba TK N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-3PN TK62J60W,S1VQ(O
- RS-artikelnummer:
- 168-7987
- Tillv. art.nr:
- TK62J60W,S1VQ(O
- Tillverkare / varumärke:
- Toshiba
Utgått
- RS-artikelnummer:
- 168-7987
- Tillv. art.nr:
- TK62J60W,S1VQ(O
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 62 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-3PN | |
| Series | TK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Maximum Power Dissipation | 400 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.5mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
| Length | 15.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 20mm | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 62 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-3PN | ||
Series TK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Maximum Power Dissipation 400 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.5mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Length 15.5mm | ||
Maximum Operating Temperature +150 °C | ||
Height 20mm | ||
- COO (Country of Origin):
- JP