Infineon HEXFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 8-Pin PQFN

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30 124,00 kr

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37 656,00 kr

(inkl. moms)

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  • Dessutom levereras 4 000 enhet(er) från den 29 december 2025
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RS-artikelnummer:
168-5989
Tillv. art.nr:
IRFH5210TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

14.9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

40nC

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

No

Width

6 mm

Height

0.9mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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