Infineon Typ N Kanal, Effekttransistor, 50 A 30 V Förbättring, 3 Ben, TO-220, OptiMOS 3
- RS-artikelnummer:
- 168-5935
- Tillv. art.nr:
- IPP055N03LGXKSA1
- Tillverkare / varumärke:
- Infineon
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- RS-artikelnummer:
- 168-5935
- Tillv. art.nr:
- IPP055N03LGXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Varumärke | Infineon | |
| Kanaltyp | Typ N | |
| Produkttyp | Effekttransistor | |
| Maximal kontinuerlig dräneringsström Id | 50A | |
| Maximal källspänning för dränering Vds | 30V | |
| Serie | OptiMOS 3 | |
| Kapseltyp | TO-220 | |
| Typ av fäste | Yta, Genomgående hål | |
| Antal ben | 3 | |
| Maximal drain-källresistans Rds | 5.5mΩ | |
| Kanalläge | Förbättring | |
| Maximal effektförlust Pd | 68W | |
| Minsta arbetsstemperatur | -55°C | |
| Typisk grindladdning Qg @ Vgs | 31nC | |
| Framåtriktad spänning Vf | 1.1V | |
| Maximal arbetstemperatur | 175°C | |
| Längd | 10.36mm | |
| Höjd | 15.95mm | |
| Standarder/godkännanden | IEC61249-2-21, JEDEC (J-STD20,JESD22), RoHS | |
| Fordonsstandard | Nej | |
| Välj alla | ||
|---|---|---|
Varumärke Infineon | ||
Kanaltyp Typ N | ||
Produkttyp Effekttransistor | ||
Maximal kontinuerlig dräneringsström Id 50A | ||
Maximal källspänning för dränering Vds 30V | ||
Serie OptiMOS 3 | ||
Kapseltyp TO-220 | ||
Typ av fäste Yta, Genomgående hål | ||
Antal ben 3 | ||
Maximal drain-källresistans Rds 5.5mΩ | ||
Kanalläge Förbättring | ||
Maximal effektförlust Pd 68W | ||
Minsta arbetsstemperatur -55°C | ||
Typisk grindladdning Qg @ Vgs 31nC | ||
Framåtriktad spänning Vf 1.1V | ||
Maximal arbetstemperatur 175°C | ||
Längd 10.36mm | ||
Höjd 15.95mm | ||
Standarder/godkännanden IEC61249-2-21, JEDEC (J-STD20,JESD22), RoHS | ||
Fordonsstandard Nej | ||
- COO (ursprungsland):
- CN
Infineon OptiMOS™ 3 Series MOSFET, 50A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IPP055N03LGXKSA1
This high-performance MOSFET is designed for various electronic applications, including power management systems. It features a through-hole TO-220 package, measuring 10.36mm x 4.57mm x 15.95mm. Specifically suited for automation and electrical industries, this device ensures optimal performance under rigorous conditions.
Features & Benefits
• Fast switching capability enhances efficiency in power applications
• Low drain-source on-resistance minimises power loss during operation
• Avalanche rated for improved durability under stress
• Logic-level N-channel design enables compatibility with low-voltage drives
• Maximum continuous drain current of 50A supports demanding tasks
Applications
• Used for DC/DC conversion in power supplies
• Ideal for synchronous rectification in high-efficiency converters
• Facilitates motor control in industrial automation systems
• Used in battery management systems for electric vehicles
• Suitable for both consumer electronics and renewable energy
What is the significance of its low RDS(on) in power applications?
A low RDS(on) reduces the on-state voltage drop, which directly lowers heat generation and improves efficiency. This is crucial for maintaining performance in high-current applications, ensuring that less energy is wasted as heat.
How does this MOSFET handle high temperatures during operation?
With a maximum operating temperature of +175 °C, it has robust thermal characteristics, allowing it to function reliably in challenging environments without compromising performance.
What type of applications can benefit from the enhancement mode transistor design?
Enhancement mode transistors are widely used in switching applications as they provide excellent control over the current flow, making them ideal for efficient power management solutions. This includes their use in power supplies and DC motors.
