onsemi PowerTrench Dual N-Channel MOSFET, 22 A, 30 A, 30 V, 8-Pin PQFN8 FDMS7608S

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RS-artikelnummer:
166-3512
Tillv. art.nr:
FDMS7608S
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

22 A, 30 A

Maximum Drain Source Voltage

30 V

Series

PowerTrench

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.6 mΩ, 13.9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.2 W, 2.5 W

Transistor Configuration

Series

Maximum Gate Source Voltage

-20 V, +20 V

Width

6mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V, 21 nC @ 10 V

Transistor Material

Si

Length

5mm

Height

0.725mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
DE

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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