onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23
- RS-artikelnummer:
- 166-2698
- Tillv. art.nr:
- FDC6305N
- Tillverkare / varumärke:
- onsemi
Antal (1 rulle med 3000 enheter)*
6 519,00 kr
(exkl. moms)
8 148,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 6 000 enhet(er) levereras från den 29 december 2025
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 2,173 kr | 6 519,00 kr |
*vägledande pris
- RS-artikelnummer:
- 166-2698
- Tillv. art.nr:
- FDC6305N
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 128mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 0.77V | |
| Maximum Power Dissipation Pd | 960mW | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.7 mm | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 128mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 0.77V | ||
Maximum Power Dissipation Pd 960mW | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.7 mm | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The FDC6305N is an N-Channel MOSFET featuring a low threshold. Designed with PowerTrench® technology it boasts minimise on-state resistance and low-gate charge for superior switching performance.
Features and Benefits:
• Low gate charge
• Fast switching speed
• PowerTrench® technology
• Super small footprint. 72% smaller than a SO08.
The FDC6305N is typically used in these applications;
• Load switching
• DC/DC Converters
• Motor Driving
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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