onsemi QFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 3-Pin TO-252
- RS-artikelnummer:
- 166-2636
- Tillv. art.nr:
- FQD13N10LTM
- Tillverkare / varumärke:
- onsemi
Antal (1 rulle med 2500 enheter)*
7 130,00 kr
(exkl. moms)
8 912,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 23 mars 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 2,852 kr | 7 130,00 kr |
*vägledande pris
- RS-artikelnummer:
- 166-2636
- Tillv. art.nr:
- FQD13N10LTM
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | QFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Height | 2.3mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series QFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Height 2.3mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor
Fairchild Semiconductors new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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