Specifikationer

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Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	N, P
	Maximum Continuous Drain Current	20 A
	Maximum Drain Source Voltage	40 V
	Package Type	DPAK (TO-252)
	Series	PowerTrench
	Mounting Type	Surface Mount
	Pin Count	5
	Maximum Drain Source Resistance	37 mΩ, 80 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	30 W, 35 W
	Transistor Configuration	Common Drain
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	6.22mm
	Length	6.73mm
	Transistor Material	Si
	Number of Elements per Chip	2
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	14 nC @ 10 V, 17 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Height	2.39mm

	Välj alla
	Brand onsemi
	Channel Type N, P
	Maximum Continuous Drain Current 20 A
	Maximum Drain Source Voltage 40 V
	Package Type DPAK (TO-252)
	Series PowerTrench
	Mounting Type Surface Mount
	Pin Count 5
	Maximum Drain Source Resistance 37 mΩ, 80 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 30 W, 35 W
	Transistor Configuration Common Drain
	Maximum Gate Source Voltage -20 V, +20 V
	Width 6.22mm
	Length 6.73mm
	Transistor Material Si
	Number of Elements per Chip 2
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 14 nC @ 10 V, 17 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Height 2.39mm

COO (Country of Origin):: US

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench Dual N/P-Channel MOSFET, 20 A, 40 V, 5-Pin DPAK FDD8424H-F085A

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

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