Infineon CoolMOS™ CFD N-Channel MOSFET, 17.5 A, 650 V, 3-Pin TO-247 IPW65R190CFDFKSA1

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RS-artikelnummer:
165-8109
Tillv. art.nr:
IPW65R190CFDFKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17.5 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ CFD

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.21mm

Transistor Material

Si

Typical Gate Charge @ Vgs

68 nC @ 10 V

Length

16.13mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Forward Diode Voltage

0.9V

Minimum Operating Temperature

-55 °C

Height

21.1mm

RoHS-status: Inte relevant

COO (Country of Origin):
CN

Infineon CoolMOS™ CFD Power MOSFET


Infineon CoolMOS™ CFD Series MOSFET, 17.5A Maximum Continuous Drain Current, 151W Maximum Power Dissipation - IPW65R190CFDFKSA1


This MOSFET is designed for high-performance applications, offering efficient switching capabilities that enhance electronic circuit functionality. It is widely used in power conversion and management, effectively handling high voltages and currents, making it crucial for numerous automation and electrical installation projects. With a maximum drain-source voltage of 700V, it meets the rigorous requirements of modern electronic designs.

Features & Benefits


• Supports a maximum continuous drain current of 17.5A for dependable performance
• Features a low drain-source resistance of 190mΩ, which increases efficiency
• Operates at a maximum temperature of +150°C for durability
• Employs an enhancement mode, allowing precise control of electrical flow
• Comes in a versatile TO-247 package for easy implementation and integration
• Suitable for both through-hole and automated assembly processes

Applications


• Utilised in renewable energy systems such as solar inverters
• Employed in electric vehicle charging stations for efficient energy transfer
• Integrated into industrial automation systems for effective motor control
• Applicable in power supply circuits requiring high-efficiency power MOSFETs
• Suitable for consumer electronics that need compact and reliable high voltage switching

What is the significance of the maximum gate threshold voltage?


The maximum gate threshold voltage is important for ensuring the device operates effectively by defining the minimum voltage required for switching, thus improving reliability in circuit designs.

Can this component handle high temperature environments?


Yes, it can safely operate at temperatures up to +150°C, making it suitable for high-temperature applications such as automotive and industrial systems.

How does the low Rds(on) benefit my circuit design?


A lower Rds(on) reduces power loss during operation, enhancing overall efficiency in power conversion systems and minimising heat generation, which is vital for reliability.

What kind of electrical connections does it support?


It supports through-hole mounting, making it compatible with automated assembly lines as well as traditional soldering methods.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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