Infineon OptiMOS™ 3 N-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ035N03MSGATMA1

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RS-artikelnummer:
165-6657
Tillv. art.nr:
BSZ035N03MSGATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Package Type

TSDSON

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.4mm

Width

3.4mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

27 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

1.1mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
SG

Infineon OptiMOS™3 Power MOSFETs, up to 40V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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