Microchip DN3135 Type N-Channel MOSFET, 135 mA, 350 V Depletion, 3-Pin SOT-23
- RS-artikelnummer:
- 165-6450P
- Tillv. art.nr:
- DN3135K1-G
- Tillverkare / varumärke:
- Microchip
Antal 25 enheter (levereras på en kontinuerlig remsa)*
98,175 kr
(exkl. moms)
122,725 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Slutlig(a) 10 575 enhet(er), redo att levereras
Enheter | Per enhet |
|---|---|
| 25 + | 3,927 kr |
*vägledande pris
- RS-artikelnummer:
- 165-6450P
- Tillv. art.nr:
- DN3135K1-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 135mA | |
| Maximum Drain Source Voltage Vds | 350V | |
| Series | DN3135 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Width | 1.4 mm | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 135mA | ||
Maximum Drain Source Voltage Vds 350V | ||
Series DN3135 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Width 1.4 mm | ||
Height 1.02mm | ||
Length 3.04mm | ||
Automotive Standard No | ||
DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an Advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage