Name: Infineon IRF7805Z N-Channel MOSFET, 16 A, 30 V, 8-Pin SO-8 IRF7805ZTRPBF
Brand: Infineon
SKU: 162-3276
Price: 7.25 SEK
Availability: Discontinued

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	16 A
	Maximum Drain Source Voltage	30 V
	Series	IRF7805Z
	Package Type	SO-8
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	8.7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.25V
	Minimum Gate Threshold Voltage	1.35V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±20 V
	Length	5mm
	Width	4mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	18 nC @ 4.5 V
	Maximum Operating Temperature	+150 °C
	Height	1.5mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1V

	Välj alla
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 16 A
	Maximum Drain Source Voltage 30 V
	Series IRF7805Z
	Package Type SO-8
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 8.7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.25V
	Minimum Gate Threshold Voltage 1.35V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±20 V
	Length 5mm
	Width 4mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 18 nC @ 4.5 V
	Maximum Operating Temperature +150 °C
	Height 1.5mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1V

Infineon HEXFET Series MOSFET, 16A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7805ZTRPBF

This MOSFET from Infineon employs advanced HEXFET technology, providing optimised performance for high-efficiency applications. With its N-channel configuration, it effectively manages high continuous drain currents while maintaining low on-resistance, making it suitable for tasks requiring robust electrical efficiency. The surface mount capability and compact SO-8 package enhance its versatility, particularly for DC-DC converter circuits powering modern electronic devices.

Features & Benefits

• Low Rds(on) to minimise energy loss
• Increases efficiency in high current applications
• Excellent thermal performance up to +150°C
• Fast switching capabilities for improved device response
• Maximum gate-source voltage of ±20V

Applications

• Applications requiring low conduction losses
• Mobile communication devices and processors
• Power supply systems for electronic devices
• Automation and control in electrical systems

What is the maximum continuous drain current capability?

It can handle up to 16A, allowing for strong performance in various applications.

What are the benefits of using this MOSFET in circuits?

Its low Rds(on) and high efficiency reduce overall power losses, leading to effective energy management.

Can this MOSFET operate at high temperatures?

Yes, it is rated for a maximum operating temperature of +150°C, ensuring functionality in diverse conditions.

How does the switching speed affect its performance?

The fast switching capabilities enhance device response, making it suitable for high-frequency applications.

Is this device compliant with environmental standards?

Yes, it is lead-free and conforms to RoHS specifications, promoting safe operation and reduced environmental impact.