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Välj alla	Attribut	Värde
	Brand	Nexperia
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	80V
	Series	BUK9M3580E
	Package Type	LFPAK
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	88mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	15 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62W
	Typical Gate Charge Qg @ Vgs	13.5nC
	Maximum Operating Temperature	175°C
	Length	3.4mm
	Width	2.6 mm
	Height	0.9mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Välj alla
	Brand Nexperia
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 80V
	Series BUK9M3580E
	Package Type LFPAK
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 88mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 15 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62W
	Typical Gate Charge Qg @ Vgs 13.5nC
	Maximum Operating Temperature 175°C
	Length 3.4mm
	Width 2.6 mm
	Height 0.9mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

N-channel 80 V, 35 mΩ logic level MOSFET in LFPAK33, Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C

12 V, 24 V and 48 V automotive systems

Motors, lamps and solenoid control

Transmission control

Ultra high performance power switching

Nexperia BUK9M3580E Type N-Channel MOSFET, 26 A, 80 V Enhancement, 4-Pin LFPAK

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