Vishay SQ Type P-Channel Power MOSFET, 2.8 A, 60 V Enhancement, 3-Pin SOT-23 SQ2361ES-T1_GE3
- RS-artikelnummer:
- 152-6376
- Tillv. art.nr:
- SQ2361ES-T1_GE3
- Tillverkare / varumärke:
- Vishay
Antal (1 förpackning med 25 enheter)*
126,775 kr
(exkl. moms)
158,475 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Dessutom levereras 125 enhet(er) från den 29 december 2025
- Sista 32 950 enhet(er) levereras från den 05 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 + | 5,071 kr | 126,78 kr |
*vägledande pris
- RS-artikelnummer:
- 152-6376
- Tillv. art.nr:
- SQ2361ES-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.177Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.177Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Standards/Approvals AEC-Q101 | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
TrenchFET® power MOSFET
Material categorization
relaterade länkar
- Vishay SQ Type P-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay SQ Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SQ2309CES-T1_GE3
- Vishay SQ Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay SQ Rugged Type P-Channel MOSFET 12 V Enhancement, 3-Pin SOT-23 SQ2315ES-T1_GE3
- Vishay SQ2361CEES Type P-Channel Single MOSFETs 60 V Enhancement, 3-Pin SOT-23 SQ2361CEES-T1_GE3
- Vishay SQ2361CES Type P-Channel Single MOSFETs 60 V Enhancement, 3-Pin SOT-23 SQ2361CES-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 12 V Enhancement, 3-Pin SOT-23
- Vishay SQ Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SQ2348CES-T1_GE3
