P-Channel MOSFET, 9 A, 100 V, 3-Pin TO-220SIS Toshiba TJ9A10M3,S4Q(M

RS-artikelnummer:: 144-5185
Tillv. art.nr:: TJ9A10M3,S4Q(M
Tillverkare / varumärke:: Toshiba

P-Channel MOSFET, 9 A, 100 V, 3-Pin TO-220SIS Toshiba TJ9A10M3,S4Q(M

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RS-artikelnummer:: 144-5185
Tillv. art.nr:: TJ9A10M3,S4Q(M
Tillverkare / varumärke:: Toshiba

TJ9A10M3 P-channel MOSFET Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	9 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220SIS
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	170 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	19 W
Transistor Configuration	Single
Maximum Gate Source Voltage	+20 V
Transistor Material	Si
Length	10mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	4.5mm
Typical Gate Charge @ Vgs	47 @ -10 V nC
Forward Diode Voltage	1.4V
Height	15mm

P-Channel MOSFET, 9 A, 100 V, 3-Pin TO-220SIS Toshiba TJ9A10M3,S4Q(M

MOSFET P-Channel, TJ9A Series, Toshiba