ROHM RYC002N05 Type N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-23 RYC002N05T316
- RS-artikelnummer:
- 133-2856
- Tillv. art.nr:
- RYC002N05T316
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 förpackning med 100 enheter)*
153,20 kr
(exkl. moms)
191,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Dessutom levereras 300 enhet(er) från den 29 december 2025
- Sista 1 300 enhet(er) levereras från den 05 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 100 - 400 | 1,532 kr | 153,20 kr |
| 500 - 900 | 1,378 kr | 137,80 kr |
| 1000 - 4900 | 1,254 kr | 125,40 kr |
| 5000 - 9900 | 1,081 kr | 108,10 kr |
| 10000 + | 1,049 kr | 104,90 kr |
*vägledande pris
- RS-artikelnummer:
- 133-2856
- Tillv. art.nr:
- RYC002N05T316
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Series | RYC002N05 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 350mW | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.15mm | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Width | 1.5 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Series RYC002N05 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 350mW | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.15mm | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Width 1.5 mm | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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