N-Channel MOSFET, 7 A, 100 V, 3-Pin DPAK Toshiba TK7S10N1Z,LQ(O
- RS-artikelnummer:
- 133-2802P
- Tillv. art.nr:
- TK7S10N1Z,LQ(O
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal 50 enheter (levereras på en kontinuerlig remsa)*
268,85 kr
(exkl. moms)
336,05 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet |
|---|---|
| 50 - 90 | 5,377 kr |
| 100 - 490 | 4,888 kr |
| 500 - 990 | 4,481 kr |
| 1000 + | 4,135 kr |
*vägledande pris
- RS-artikelnummer:
- 133-2802P
- Tillv. art.nr:
- TK7S10N1Z,LQ(O
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DPAK+ (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 48 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 50 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5.5mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 7.1 nC @ 10 V | |
| Length | 6.5mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 2.3mm | |
| Series | U-MOSVIII-H | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK+ (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 48 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 50 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.5mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 7.1 nC @ 10 V | ||
Length 6.5mm | ||
Forward Diode Voltage 1.2V | ||
Height 2.3mm | ||
Series U-MOSVIII-H | ||
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
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