Infineon HEXFET Type N-Channel MOSFET, 129 A, 135 V Enhancement, 3-Pin TO-263 IRF135S203

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54,21 kr

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67,762 kr

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RS-artikelnummer:
130-0937
Tillv. art.nr:
IRF135S203
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

129A

Maximum Drain Source Voltage Vds

135V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

441W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Height

9.65mm

Width

4.83 mm

Automotive Standard

No

StrongIRFET™ Power MOSFET, Infineon


Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness Ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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