Infineon CoolMOS CE Type N-Channel MOSFET, 9 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R650CEATMA1

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RS-artikelnummer:
130-0914
Tillv. art.nr:
IPN50R650CEATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

550V

Series

CoolMOS CE

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

15nC

Forward Voltage Vf

0.83V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

5W

Maximum Operating Temperature

150°C

Width

3.7 mm

Height

1.7mm

Length

6.7mm

Standards/Approvals

No

Automotive Standard

No

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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