Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V Enhancement, 3-Pin TO-220 IRFB5620PBF
- RS-artikelnummer:
- 124-9009
- Tillv. art.nr:
- IRFB5620PBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
607,40 kr
(exkl. moms)
759,25 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 1 500 enhet(er) är redo att levereras
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 12,148 kr | 607,40 kr |
| 100 - 200 | 9,84 kr | 492,00 kr |
| 250 - 450 | 9,231 kr | 461,55 kr |
| 500 - 950 | 8,624 kr | 431,20 kr |
| 1000 + | 8,053 kr | 402,65 kr |
*vägledande pris
- RS-artikelnummer:
- 124-9009
- Tillv. art.nr:
- IRFB5620PBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 14W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.02mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 14W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 9.02mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Digital Audio MOSFET, Infineon
Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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