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Infineon HEXFET Type N-Channel MOSFET, 210 A, 60 V Enhancement, 3-Pin TO-220

RS-artikelnummer:: 124-8962
Tillv. art.nr:: IRFB3206PBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 210 A, 60 V Enhancement, 3-Pin TO-220

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Antal (1 rör med 50 enheter)*

734,95 kr

(exkl. moms)

918,70 kr

(inkl. moms)

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Enheter	Per enhet	Per Rør*
50 - 50	14,699 kr	734,95 kr
100 - 200	13,082 kr	654,10 kr
250 - 450	12,376 kr	618,80 kr
500 - 950	12,067 kr	603,35 kr
1000 +	11,76 kr	588,00 kr

*vägledande pris

RS-artikelnummer:: 124-8962
Tillv. art.nr:: IRFB3206PBF
Tillverkare / varumärke:: Infineon

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Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	210A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	120nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	300W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	175°C
	Width	4.83 mm
	Standards/Approvals	No
	Height	9.02mm
	Length	10.67mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 210A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 120nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 300W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 175°C
	Width 4.83 mm
	Standards/Approvals No
	Height 9.02mm
	Length 10.67mm
	Automotive Standard No

COO (Country of Origin):: CN

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