onsemi QFET Type N-Channel Power MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-220AB FQP30N06
- RS-artikelnummer:
- 124-1756
- Tillv. art.nr:
- FQP30N06
- Tillverkare / varumärke:
- onsemi
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RS kommer inte längre att lagerföra denna produkt.
- RS-artikelnummer:
- 124-1756
- Tillv. art.nr:
- FQP30N06
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | QFET | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.04Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 79W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.4mm | |
| Length | 10.1mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series QFET | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.04Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 79W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.4mm | ||
Length 10.1mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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