Renesas P-Channel MOSFET, 15 A, 60 V, 3-Pin DPAK NP15P06SLG-E1-AY
- RS-artikelnummer:
- 121-6891P
- Tillv. art.nr:
- NP15P06SLG-E1-AY
- Tillverkare / varumärke:
- Renesas Electronics
Mängdrabatt möjlig
Antal 50 enheter (levereras på en kontinuerlig remsa)*
473,00 kr
(exkl. moms)
591,00 kr
(inkl. moms)
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet |
|---|---|
| 50 - 90 | 9,46 kr |
| 100 - 490 | 8,27 kr |
| 500 - 990 | 6,62 kr |
| 1000 + | 5,51 kr |
*vägledande pris
- RS-artikelnummer:
- 121-6891P
- Tillv. art.nr:
- NP15P06SLG-E1-AY
- Tillverkare / varumärke:
- Renesas Electronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 15 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-252 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 95 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 30 W | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Width | 6.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Forward Diode Voltage | 1.5V | |
| Välj alla | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 15 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-252 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 95 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Number of Elements per Chip 1 | ||
Width 6.1mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Length 6.5mm | ||
Height 2.3mm | ||
Forward Diode Voltage 1.5V | ||
- COO (Country of Origin):
- MY
P-Channel MOSFET, Renesas Electronics (NEC)
MOSFET Transistors, Renesas Electronics (NEC)