STMicroelectronics STL N channel-Channel Power MOSFET, 268 A, 60 V Enhancement, 8-Pin PowerFLAT STL270N6LF7
- RS-artikelnummer:
- 719-656
- Tillv. art.nr:
- STL270N6LF7
- Tillverkare / varumärke:
- STMicroelectronics
Antal (1 rulle med 3000 enheter)*
43 671,00 kr
(exkl. moms)
54 588,00 kr
(inkl. moms)
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- Leverans från den 02 mars 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 14,557 kr | 43 671,00 kr |
*vägledande pris
- RS-artikelnummer:
- 719-656
- Tillv. art.nr:
- STL270N6LF7
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 268A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerFLAT | |
| Series | STL | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Power Dissipation Pd | 187W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.1mm | |
| Height | 1mm | |
| Width | 5 mm | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 268A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerFLAT | ||
Series STL | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Power Dissipation Pd 187W | ||
Maximum Operating Temperature 175°C | ||
Length 6.1mm | ||
Height 1mm | ||
Width 5 mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Logic level VGS(th)