STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG
- RS-artikelnummer:
- 719-468
- Tillv. art.nr:
- SCT018W65G3AG
- Tillverkare / varumärke:
- STMicroelectronics
Denna bild representerar endast produktgruppen
Mängdrabatt möjlig
Antal (1 enhet)*
177,18 kr
(exkl. moms)
221,48 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 299 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 4 | 177,18 kr |
| 5 + | 171,81 kr |
*vägledande pris
- RS-artikelnummer:
- 719-468
- Tillv. art.nr:
- SCT018W65G3AG
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HIP-247-3 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.6V | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 398W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 200°C | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Width | 5.15 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HIP-247-3 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.6V | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 398W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 200°C | ||
Height 20.15mm | ||
Length 15.75mm | ||
Width 5.15 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance