Vishay SQ2310CES Type N-Channel Single MOSFETs, 6 A, 30 V Enhancement, 8-Pin PowerPAK
- RS-artikelnummer:
- 653-116
- Tillv. art.nr:
- SQ2310CES-T1_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
3,47 kr
(exkl. moms)
4,34 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 2 685 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Längd(er) | Per Längd |
|---|---|
| 1 - 24 | 3,47 kr |
| 25 - 99 | 3,14 kr |
| 100 - 499 | 2,80 kr |
| 500 - 999 | 2,46 kr |
| 1000 + | 2,13 kr |
*vägledande pris
- RS-artikelnummer:
- 653-116
- Tillv. art.nr:
- SQ2310CES-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SQ2310CES | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.04mm | |
| Width | 2.64 mm | |
| Height | 1.12mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SQ2310CES | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 3.04mm | ||
Width 2.64 mm | ||
Height 1.12mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Vishay Compact automotive-grade N-channel MOSFET tailored for low-voltage switching applications. With a drain-source voltage rating of 20 V and a maximum junction temperature of 175 °C, its Ideal for space-constrained, thermally demanding environments. It comes in a SOT-23 package and leverages TrenchFET technology for efficient performance.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
relaterade länkar
- Vishay SQ2310CES Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK SQ2310CES-T1_GE3
- Vishay SQJQ140ER Type N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK
- Vishay SQJQ114EL Type N-Channel Single MOSFETs 100 V Enhancement, 4-Pin PowerPAK
- Vishay SQJQ14 Type N-Channel Single MOSFETs 40 V Enhancement, 3-Pin PowerPAK
- Vishay SQJ738EP Dual N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK
- Vishay SQS174ELNW Type N-Channel Single MOSFETs 72 V Enhancement, 8-Pin PowerPAK
- Vishay SQS146 Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK
- Vishay SQJ190 Type N-Channel Single MOSFETs 100 V Enhancement, 4-Pin PowerPAK
