Nexperia PHT6NQ10T Type N-Channel MOSFET, 3 A, 100 V Enhancement, 4-Pin SC-73 PHT6NQ10T,135
- RS-artikelnummer:
- 509-576
- Tillv. art.nr:
- PHT6NQ10T,135
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
26,70 kr
(exkl. moms)
33,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 4 255 enhet(er) levereras från den 08 januari 2026
- Dessutom levereras 10 enhet(er) från den 09 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 35 | 5,34 kr | 26,70 kr |
| 40 + | 3,674 kr | 18,37 kr |
*vägledande pris
- RS-artikelnummer:
- 509-576
- Tillv. art.nr:
- PHT6NQ10T,135
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | PHT6NQ10T | |
| Package Type | SC-73 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.7mm | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series PHT6NQ10T | ||
Package Type SC-73 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Height 1.7mm | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
relaterade länkar
- Nexperia PHT6NQ10T Type N-Channel MOSFET 100 V Enhancement, 4-Pin SC-73
- Nexperia BSP225 Type P-Channel MOSFET 250 V Enhancement, 4-Pin SC-73
- Nexperia BSP225 Type P-Channel MOSFET 250 V Enhancement115
- Nexperia 2N7002PW Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Nexperia 2N7002BKW Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Nexperia BSS138PW Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Nexperia NX3008NBKW Type N-Channel MOSFET 30 V Enhancement, 3-Pin SC-70
- Nexperia BSS138BKW Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
