Infineon FF6MR Type N-Channel MOSFET, 150 A, 1200 V Enhancement AG-EASY2B FF6MR20W2M1HB70BPSA1

Se alla MOSFETs

Antal (1 enhet)*

8 029,52 kr

(exkl. moms)

10 036,90 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 15 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
1 +8 029,52 kr

*vägledande pris

RS-artikelnummer:
351-916
Tillv. art.nr:
FF6MR20W2M1HB70BPSA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

1200V

Series

FF6MR

Package Type

AG-EASY2B

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Forward Voltage Vf

5.35V

Maximum Power Dissipation Pd

20mW

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 60068, IEC 60749, IEC 60747

Length

62.8mm

Height

12.255mm

Width

48 mm

Automotive Standard

No

The Infineon EasyDUAL 2B CoolSiC MOSFET half-bridge module 2000 V, 6 mΩ with NTC temperature sensor, Press FIT Contact Technology and aluminum nitride ceramic.

Best in Class packages with 12mm height

Leading edge WBG material

Very low module stray inductance

Press FIT pins

Integrated NTC temperature sensor

Wide gate source voltage range

Low switching & conduction losses

relaterade länkar