STMicroelectronics PD5 Type N-Channel MOSFET, 2.5 A, 65 V Enhancement, 10-Pin PowerSO-10RF PD57018-E
- RS-artikelnummer:
- 330-355
- Tillv. art.nr:
- PD57018-E
- Tillverkare / varumärke:
- STMicroelectronics
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413,84 kr
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517,30 kr
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 413,84 kr |
| 10 - 99 | 372,40 kr |
| 100 + | 343,50 kr |
*vägledande pris
- RS-artikelnummer:
- 330-355
- Tillv. art.nr:
- PD57018-E
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 65V | |
| Package Type | PowerSO-10RF | |
| Series | PD5 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 0.76Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | 65°C | |
| Maximum Power Dissipation Pd | 31.7W | |
| Maximum Operating Temperature | 165°C | |
| Standards/Approvals | J-STD-020B | |
| Height | 3.6mm | |
| Width | 9.6 mm | |
| Length | 14.35mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 65V | ||
Package Type PowerSO-10RF | ||
Series PD5 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 0.76Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature 65°C | ||
Maximum Power Dissipation Pd 31.7W | ||
Maximum Operating Temperature 165°C | ||
Standards/Approvals J-STD-020B | ||
Height 3.6mm | ||
Width 9.6 mm | ||
Length 14.35mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The STMicroelectronics RF POWER transistor is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
Excellent thermal stability
Common source configuration
New RF plastic package
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