Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 16 A, 650 V, 8-Pin PG-HSOF-8 IPT65R190CFD7XTMA1

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RS-artikelnummer:
284-916
Tillv. art.nr:
IPT65R190CFD7XTMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

650V CoolMOS CFD7 SJ Power Device

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an advanced 650V CoolMOS CFD7 power device brings forth unparalleled efficiency and thermal performance for applications in resonant switching topologies. Designed as a flagship within the CFD7 series, it promises enhanced switching characteristics, making it the ideal solution for demanding environments such as server, telecom, and EV charging applications. With its innovative ultra fast body diode and superior hard commutation robustness, this device transcends traditional MOSFET functionality, enabling a significant boost in power density and reliability. Its advanced design accentuates the thermal management capabilities required for high performance systems.

Ultra fast body diode improves critical performance
Best in class on state resistance reduces energy loss
Tailored for high power density boosting efficiency
Optimised for phase shift full bridge designs
Meets safety standards for reliable operation
Fully qualified to JEDEC standards for quality

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