Infineon OptiMOS Type N-Channel MOSFET, 120 A, 120 V Enhancement, 16-Pin PG-HDSOP-16-1 IAUTN12S5N018TATMA1

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RS-artikelnummer:
284-710
Tillv. art.nr:
IAUTN12S5N018TATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS

Package Type

PG-HDSOP-16-1

Mount Type

Surface

Pin Count

16

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

358W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS 5 Automotive Power MOSFET offers exceptional performance and reliability for automotive applications. With its N channel enhancement mode design, this power transistor is engineered to meet the stringent requirements of the automotive sector, ensuring superior efficiency and robust functionality. Boasting an extended qualification beyond AEC Q101, it undergoes enhanced electrical testing to guarantee durability even in harsh environments. This device supports a wide operating temperature range, making it suitable for diverse automotive conditions. Its low on state resistance and high continuous drain current capability make this MOSFET an Ideal choice for demanding power management tasks, ensuring that vehicle performance remains uncompromised.

Designed for automotive compliance

Robust for challenging environments

Enhanced testing for reliability

Excellent thermal performance

High efficiency with minimal loss

Avalanche rated for energy transients

MSL1 classification up to 260°C

Advanced gate charge for efficient switching

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