ROHM SCT Type N-Channel MOSFET, 24 A, 1200 V Enhancement, 7-Pin TO-263-7LA SCT4062KWAHRTL
- RS-artikelnummer:
- 264-886
- Tillv. art.nr:
- SCT4062KWAHRTL
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 enhet)*
97,44 kr
(exkl. moms)
121,80 kr
(inkl. moms)
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- Dessutom levereras 1 000 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 97,44 kr |
| 10 - 99 | 87,81 kr |
| 100 - 499 | 80,86 kr |
| 500 - 999 | 75,04 kr |
| 1000 + | 60,93 kr |
*vägledande pris
- RS-artikelnummer:
- 264-886
- Tillv. art.nr:
- SCT4062KWAHRTL
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263-7LA | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 81mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 93W | |
| Maximum Gate Source Voltage Vgs | 21 V | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Forward Voltage Vf | 3.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263-7LA | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 81mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 93W | ||
Maximum Gate Source Voltage Vgs 21 V | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Forward Voltage Vf 3.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
The ROHM Silicon-carbide (SiC) MOSFET features a high voltage resistance, low ON resistance, and fast switching speed.
Qualified to AEC-Q101
Low on-resistance
Fast switching speed
Fast reverse recovery
Easy to parallel
Simple to drive
Pb-free lead plating and RoHS compliant
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