onsemi NVMFWS Type N-Channel MOSFET, 201 A, 80 V Enhancement, 8-Pin SO-8FL NVMFWS1D9N08XT1G
- RS-artikelnummer:
- 220-571
- Tillv. art.nr:
- NVMFWS1D9N08XT1G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 längd med 2 enheter)*
79,41 kr
(exkl. moms)
99,262 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 488 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Längd* |
|---|---|---|
| 2 - 18 | 39,705 kr | 79,41 kr |
| 20 - 198 | 35,84 kr | 71,68 kr |
| 200 - 998 | 33,04 kr | 66,08 kr |
| 1000 - 1998 | 30,63 kr | 61,26 kr |
| 2000 + | 24,92 kr | 49,84 kr |
*vägledande pris
- RS-artikelnummer:
- 220-571
- Tillv. art.nr:
- NVMFWS1D9N08XT1G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 201A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8FL | |
| Series | NVMFWS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 164W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.9 mm | |
| Length | 4.9mm | |
| Height | 1mm | |
| Standards/Approvals | AEC and PPAP Capable | |
| Automotive Standard | AEC-Q | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 201A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8FL | ||
Series NVMFWS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 164W | ||
Maximum Operating Temperature 175°C | ||
Width 5.9 mm | ||
Length 4.9mm | ||
Height 1mm | ||
Standards/Approvals AEC and PPAP Capable | ||
Automotive Standard AEC-Q | ||
- COO (Country of Origin):
- MY
The ON Semiconductor MOSFET has Low QRR. This device are Pb−Free, Halogen Free/BFR Free.
Low RDS(on) to Minimize Conduction Losses
RoHS Compliant
relaterade länkar
- onsemi NTMFS Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8FL NTMFS2D1N08XT1G
- onsemi NVMFWS Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFNW-5 NVMFWS2D5N08XT1G
- onsemi NVMFWS Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFNW-5 NVMFWS1D5N08XT1G
- onsemi NTMFS4C06N Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8FL
- onsemi NTMFS Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8FL
- onsemi NTMFS4C10N Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8FL
- onsemi NTMFS Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8FL
- onsemi NTMFS5C646NL Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8FL
