Nexperia PSM Type N-Channel MOSFET, 180 A, 40 V Enhancement, 5-Pin LFPAK PSMN2R2-40YSBX

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18 133,50 kr

(exkl. moms)

22 666,50 kr

(inkl. moms)

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  • Dessutom levereras 1 500 enhet(er) från den 26 december 2025
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1500 +12,089 kr18 133,50 kr

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RS-artikelnummer:
219-519
Tillv. art.nr:
PSMN2R2-40YSBX
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

2.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

166W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

32nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET is utilizing Advanced TrenchMOS Super junction technology. The package is qualified to 175 °C. It is designed for high-performance power switching applications. Key applications include automation, robotics, DC-to-DC converters, brushless DC motor control, industrial load-switching, eFuse, and inrush management.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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