Nexperia PSM Type N-Channel MOSFET, 180 A, 40 V Enhancement, 5-Pin LFPAK PSMN2R0-40YLBX
- RS-artikelnummer:
- 219-518
- Tillv. art.nr:
- PSMN2R0-40YLBX
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
12,99 kr
(exkl. moms)
16,24 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 1 495 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Längd(er) | Per Längd |
|---|---|
| 1 - 9 | 12,99 kr |
| 10 - 99 | 11,87 kr |
| 100 - 499 | 10,75 kr |
| 500 - 999 | 9,97 kr |
| 1000 + | 8,96 kr |
*vägledande pris
- RS-artikelnummer:
- 219-518
- Tillv. art.nr:
- PSMN2R0-40YLBX
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | PSM | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 166W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series PSM | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 166W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET is utilizing Advanced TrenchMOS Super junction technology. It is designed for high-performance power switching applications. Key applications include automation, robotics, DC-to-DC converters, brushless DC motor control, industrial load-switching, eFuse, and inrush management.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
relaterade länkar
- Nexperia PSM Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN2R0-40YLBX
- Nexperia PSM Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN3R2-40YLBX
- Nexperia PSM Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R7-40YLBX
- Nexperia PSM Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN2R5-40YLBX
- Nexperia PSM Type N-Channel MOSFET 25 V Enhancement, 5-Pin LFPAK PSMN2R0-25MLDX
- Nexperia PSM Type N-Channel MOSFET 25 V Enhancement, 5-Pin LFPAK PSMN2R0-25YLDX
- Nexperia PSM Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN2R0-100SSFJ
- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN2R0-30YLDX