Nexperia PSM Type N-Channel MOSFET, 179 A, 25 V Enhancement, 5-Pin LFPAK PSMN2R0-25YLDX

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13 501,50 kr

(exkl. moms)

16 876,50 kr

(inkl. moms)

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  • Dessutom levereras 1 500 enhet(er) från den 26 december 2025
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1500 +9,001 kr13 501,50 kr

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RS-artikelnummer:
219-441
Tillv. art.nr:
PSMN2R0-25YLDX
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

179A

Maximum Drain Source Voltage Vds

25V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

2.09mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34.1nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

115W

Maximum Gate Source Voltage Vgs

10 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Superfast switching with soft recovery

Qualified to 175 °C

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