Nexperia PSM Type N-Channel MOSFET, 150 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R8-30MLHX
- RS-artikelnummer:
- 219-268
- Tillv. art.nr:
- PSMN1R8-30MLHX
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
12,43 kr
(exkl. moms)
15,54 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 500 enhet(er) från den 29 december 2025
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Längd(er) | Per Längd |
|---|---|
| 1 - 9 | 12,43 kr |
| 10 - 99 | 11,20 kr |
| 100 - 499 | 10,30 kr |
| 500 - 999 | 9,52 kr |
| 1000 + | 8,62 kr |
*vägledande pris
- RS-artikelnummer:
- 219-268
- Tillv. art.nr:
- PSMN1R8-30MLHX
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PSM | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 106W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PSM | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 106W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET featuring NextPowerS3 technology offers low RDS, low IDSS leakage, and high efficiency, with a current rating of 150 A. Its optimized low gate resistance supports fast-switching applications. Key applications include synchronous buck regulators, synchronous rectifiers in AC to DC and DC to DC conversions, BLDC motor control, eFuse and battery protection, as well as OR-ing and hot-swap functionalities.
Fast switching
Low spiking and ringing for low EMI designs
High reliability copper clip bonded
Qualified to 175 °C
Exposed leads for optimal Visual solder inspection
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