Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223 BSP171PH6327XTSA1

RS-artikelnummer:: 167-942
Tillv. art.nr:: BSP171PH6327XTSA1
Tillverkare / varumärke:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223 BSP171PH6327XTSA1

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Enheter	Per enhet	Per förpackning*
10 - 90	7,067 kr	70,67 kr
100 - 240	6,709 kr	67,09 kr
250 - 490	6,574 kr	65,74 kr
500 - 990	6,16 kr	61,60 kr
1000 +	5,723 kr	57,23 kr

*vägledande pris

RS-artikelnummer:: 167-942
Tillv. art.nr:: BSP171PH6327XTSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.9A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.8W
	Forward Voltage Vf	-1.1V
	Typical Gate Charge Qg @ Vgs	13nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	3.5 mm
	Height	1.6mm
	Length	6.5mm
	Standards/Approvals	No
	Distrelec Product Id	304-36-976
	Automotive Standard	AEC-Q101

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.9A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.8W
	Forward Voltage Vf -1.1V
	Typical Gate Charge Qg @ Vgs 13nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 3.5 mm
	Height 1.6mm
	Length 6.5mm
	Standards/Approvals No
	Distrelec Product Id 304-36-976
	Automotive Standard AEC-Q101

Infineon SIPMOS® Series MOSFET, 1.9A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP171PH6327XTSA1

This MOSFET is designed for high-performance switching applications, utilising P-channel technology. With SIPMOS® technology, it ensures dependable operation in a compact SOT-223 package, making it a suitable option for automotive and industrial applications. The continuous drain current rating of 1.9A and a maximum voltage of 60V enhance its effectiveness in efficiently managing power across various uses.

Features & Benefits

• P-channel configuration supports low side switching applications

• Enhancement mode operation promotes efficient performance

• Surface mount design conserves valuable PCB space

• Rated for high temperatures up to +150°C, ensuring durability

• Low Rds(on) diminishes power loss during switching

Applications

• Load switching in automotive electronics

• Power management circuits for energy efficiency

• High-frequency requiring rapid switching

• Driving loads in consumer electronic devices

• Power supply circuits necessitating compact solutions

What is the maximum drain-source voltage this component can handle?

The component can withstand a maximum drain-source voltage of 60V, making it suitable for various applications.

How does this component perform at elevated temperatures?

It operates effectively at temperatures up to +150°C, providing performance in demanding environments.

Can it be used in battery-operated circuits?

Yes, its low Rds(on) significantly reduces power loss, making it well-suited for battery-operated devices.

What is the significance of the avalanche rating?

The avalanche rating indicates that the device can absorb energy spikes, enhancing its durability and reliability during transients.

How can I ensure proper installation on the PCB?

It is essential to follow the dimension specifications for the SOT-223 package and to implement adequate thermal management during installation.