STMicroelectronics HB Type P-Channel MOSFET, 650 V Depletion, 9-Pin ACEPACK SMIT STGSH80HB65DAG

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62 227,00 kr

(exkl. moms)

77 783,80 kr

(inkl. moms)

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200 +311,135 kr62 227,00 kr

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RS-artikelnummer:
152-181
Tillv. art.nr:
STGSH80HB65DAG
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type P

Product Type

MOSFET

Maximum Drain Source Voltage Vds

650V

Package Type

ACEPACK SMIT

Series

HB

Mount Type

Surface

Pin Count

9

Channel Mode

Depletion

Forward Voltage Vf

1.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

456nC

Maximum Power Dissipation Pd

250W

Maximum Operating Temperature

175°C

Height

4.05mm

Length

25.20mm

Width

33.20 mm

Standards/Approvals

Automotive-grade

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics device combines two IGBTs and diodes in half-bridge topology mounted on a very Compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included in every switch.

AQG 324 qualified

High-speed switching series

Minimized tail current

Tight parameter distribution

Low thermal resistance thanks to DBC substrate

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