STMicroelectronics MDmesh Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247

Antal (1 förpackning med 2 enheter)*

64,40 kr

(exkl. moms)

80,50 kr

(inkl. moms)

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RS-artikelnummer:
151-455
Tillv. art.nr:
STW20NM60
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

MDmesh

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.29Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

39nC

Forward Voltage Vf

1.6V

Minimum Operating Temperature

50°C

Maximum Operating Temperature

150°C

Length

34.95mm

Width

15.75 mm

Standards/Approvals

RoHS

Height

5.15mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET associates the multiple drain process with the company’s Power MESH horizontal layout. The resulting product has an outstanding low on resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

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