STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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770,85 kr

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Förpackningsalternativ:
RS-artikelnummer:
877-2905P
Tillv. art.nr:
STGW30NC60KD
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

200 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 24.45mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

2170pF

Maximum Operating Temperature

+150 °C

Energy Rating

1435mJ

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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