Semikron Danfoss SKM100GB12T4 Dual Half Bridge IGBT Module, 160 A 1200 V, 7-Pin SEMITRANS2, Panel Mount

Mängdrabatt möjlig

Antal (1 enhet)*

1 105,49 kr

(exkl. moms)

1 381,86 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 101 enhet(er) från den 05 januari 2026
  • Dessutom levereras 10 enhet(er) från den 05 januari 2026
  • Dessutom levereras 151 enhet(er) från den 12 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
1 - 11 105,49 kr
2 - 41 050,34 kr
5 - 91 002,74 kr
10 - 19884,35 kr
20 +840,00 kr

*vägledande pris

RS-artikelnummer:
687-4958
Tillv. art.nr:
SKM100GB12T4
Tillverkare / varumärke:
Semikron Danfoss
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Semikron Danfoss

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Configuration

Dual Half Bridge

Package Type

SEMITRANS2

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30.1mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Dual IGBT Modules


A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology


IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

relaterade länkar