Infineon FF225R17ME7B11BPSA1 IGBT Module, 225 A 1700 V
- RS-artikelnummer:
- 250-0219
- Tillv. art.nr:
- FF225R17ME7B11BPSA1
- Tillverkare / varumärke:
- Infineon
Antal (1 fack med 10 enheter)*
15 415,79 kr
(exkl. moms)
19 269,74 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet | Per Bricka* |
|---|---|---|
| 10 + | 1 541,579 kr | 15 415,79 kr |
*vägledande pris
- RS-artikelnummer:
- 250-0219
- Tillv. art.nr:
- FF225R17ME7B11BPSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 225 A | |
| Maximum Collector Emitter Voltage | 1700 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 20 mW | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 225 A | ||
Maximum Collector Emitter Voltage 1700 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 20 mW | ||
The Infineon EconoDUAL™ 3 1700 V, 225 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology.
Integrated temperature sensor
High current density
Low VCE, sat
Overload operation up to 175°C
TRENCHSTOPTM IGBT7
VCE, sat with positive temperature coefficient
High power density
Isolated base plate
PressFIT contact technology
Standard housing
High current density
Low VCE, sat
Overload operation up to 175°C
TRENCHSTOPTM IGBT7
VCE, sat with positive temperature coefficient
High power density
Isolated base plate
PressFIT contact technology
Standard housing
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