Infineon IKN04N60RC2ATMA1 IGBT, 7.5 A 600 V PG-SOT223-3
- RS-artikelnummer:
- 240-8531
- Tillv. art.nr:
- IKN04N60RC2ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
34,38 kr
(exkl. moms)
42,975 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 930 enhet(er) från den 01 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 6,876 kr | 34,38 kr |
| 50 - 120 | 5,914 kr | 29,57 kr |
| 125 - 245 | 5,51 kr | 27,55 kr |
| 250 - 495 | 5,152 kr | 25,76 kr |
| 500 + | 4,726 kr | 23,63 kr |
*vägledande pris
- RS-artikelnummer:
- 240-8531
- Tillv. art.nr:
- IKN04N60RC2ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 7.5 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 6.8 W | |
| Number of Transistors | 1 | |
| Package Type | PG-SOT223-3 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 7.5 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 6.8 W | ||
Number of Transistors 1 | ||
Package Type PG-SOT223-3 | ||
The Infineon RC Drives 2 600 V, 1 A IGBT Discrete in PG- SOT-223 package. The RC-D2 with the monolithically integrated diode offers improvements of the performance, controllability and reliability compared to the RC-DF. It provides low switching loses on competitive price and is asy to design in products – drop in SMD replacement in DPAK and SOT-223 with high system reliability.
Improved controllability
Operating range of 1 to 20 kHz
Humidity robust design
Maximum junction temperature 150°C
Short circuit capability of 3 μs
Very tight parameter distribution
Pb free lead plating, RoHs compliant
Complete product spectrum and SPICE models
Operating range of 1 to 20 kHz
Humidity robust design
Maximum junction temperature 150°C
Short circuit capability of 3 μs
Very tight parameter distribution
Pb free lead plating, RoHs compliant
Complete product spectrum and SPICE models
relaterade länkar
- Infineon IKN04N60RC2ATMA1 IGBT, 7.5 A 600 V PG-SOT223-3
- Infineon IKN06N60RC2ATMA1 IGBT, 8 A 600 V PG-SOT223-3
- Infineon IKN03N60RC2ATMA1 IGBT, 5.7 A 600 V PG-SOT223-3
- Infineon IKN01N60RC2ATMA1 IGBT, 2.2 A 600 V PG-SOT223-3
- Infineon IKN01N60RC2ATMA1 Single IGBT 3-Pin PG-SOT223-3, Surface Mount
- Infineon IKD15N60RFATMA1 Single IGBT 3-Pin PG-TO252
- Infineon IKD10N60RATMA1 Single IGBT 3-Pin PG-TO252
- Infineon IKD15N60RC2ATMA1 IGBT 600 V PG-TO252-3
