Infineon FZ1800R45HL4BPSA1 Single IGBT Module, 1.8 kA 4500 V AG-IHVB190
- RS-artikelnummer:
- 236-5195
- Tillv. art.nr:
- FZ1800R45HL4BPSA1
- Tillverkare / varumärke:
- Infineon
Antal (1 enhet)*
24 157,77 kr
(exkl. moms)
30 197,21 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 + | 24 157,77 kr |
*vägledande pris
- RS-artikelnummer:
- 236-5195
- Tillv. art.nr:
- FZ1800R45HL4BPSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 1.8 kA | |
| Maximum Collector Emitter Voltage | 4500 V | |
| Maximum Gate Emitter Voltage | ± 20V | |
| Number of Transistors | 3 | |
| Maximum Power Dissipation | 4000 kW | |
| Package Type | AG-IHVB190 | |
| Configuration | Single | |
| Channel Type | N | |
| Dimensions | 190 x 140 x 38.5mm | |
| Minimum Operating Temperature | -40 °C | |
| Gate Capacitance | 297nF | |
| Maximum Operating Temperature | +150 °C | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 1.8 kA | ||
Maximum Collector Emitter Voltage 4500 V | ||
Maximum Gate Emitter Voltage ± 20V | ||
Number of Transistors 3 | ||
Maximum Power Dissipation 4000 kW | ||
Package Type AG-IHVB190 | ||
Configuration Single | ||
Channel Type N | ||
Dimensions 190 x 140 x 38.5mm | ||
Minimum Operating Temperature -40 °C | ||
Gate Capacitance 297nF | ||
Maximum Operating Temperature +150 °C | ||
Infineon IGBT Module, 1.8 kA Maximum Continuous Collector Current, 4500V Maximum Collector Emitter Voltage - FZ1800R45HL4BPSA1
This IGBT module is designed for high-power applications within the power electronics sector. It features a maximum continuous collector current of 1.8kA and a collector-emitter voltage of up to 4500V, making it suitable for demanding environments. The dimensions of this compact module are 190 x 140 x 38.5 mm, ensuring flexible integration into various systems.
Features & Benefits
• High DC stability ensures consistent performance in challenging conditions
• Emitter-controlled 4 diode enhances short-circuit current handling
• Low collector-emitter saturation voltage improves energy efficiency
• Capable of high dynamic robustness for reliable operation
• Enhanced gate capacitance optimises switching performance
• Emitter-controlled 4 diode enhances short-circuit current handling
• Low collector-emitter saturation voltage improves energy efficiency
• Capable of high dynamic robustness for reliable operation
• Enhanced gate capacitance optimises switching performance
Applications
• Used for high-power converters in industrial environments
• Ideal for medium-voltage converter systems
• Suitable for power transmission and distribution networks
• Ideal for medium-voltage converter systems
• Suitable for power transmission and distribution networks
What is the significance of the collector-emitter voltage rating?
The collector-emitter voltage rating of 4500V ensures that the module can operate effectively even in high-voltage applications, preventing early failure and ensuring reliable performance.
How does the module enhance energy efficiency in power systems?
A low collector-emitter saturation voltage contributes to reduced energy losses during switching, making it ideal for applications requiring high energy efficiency.
What kind of thermal management solutions does it incorporate?
The module features an AlSiC base plate for improved thermal cycling capability, allowing it to operate efficiently even in fluctuating temperature conditions.
How does the dynamic robustness of this module benefit industrial automation?
Its high dynamic robustness facilitates reliable operation under varying load conditions, thus enhancing the overall stability and efficiency of industrial automation processes.
Can this module handle short-circuit conditions effectively?
Yes, the design includes emitter-controlled diodes that provide excellent short-circuit capability, allowing it to endure transient conditions without damage.
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