Infineon IKWH20N65WR6XKSA1 Single IGBT, 20 A 650 V, 3-Pin TO-247-3-HCC, Through Hole
- RS-artikelnummer:
- 232-6733
- Tillv. art.nr:
- IKWH20N65WR6XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 30 enheter)*
702,54 kr
(exkl. moms)
878,16 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 21 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 30 | 23,418 kr | 702,54 kr |
| 60 - 120 | 22,251 kr | 667,53 kr |
| 150 - 270 | 21,31 kr | 639,30 kr |
| 300 - 570 | 20,377 kr | 611,31 kr |
| 600 + | 19,439 kr | 583,17 kr |
*vägledande pris
- RS-artikelnummer:
- 232-6733
- Tillv. art.nr:
- IKWH20N65WR6XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 20 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 70 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247-3-HCC | |
| Configuration | Single | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 20 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 70 W | ||
Number of Transistors 1 | ||
Package Type TO-247-3-HCC | ||
Configuration Single | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The Infineon's 20 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.
Monolithically integrated diode
Lowest switching losses
Improved reliability against package contamination
Lowest switching losses
Improved reliability against package contamination
relaterade länkar
- Infineon IKWH20N65WR6XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH30N65WR5XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH70N65WR6XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH40N65WR6XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH50N65WR6XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH30N65WR6XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH60N65WR6XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKW40N65H5FKSA1 IGBT 3-Pin TO-247, Through Hole
